Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC IRF7105TRPBF

RS kodas: 826-8829PGamintojas: InfineonGamintojo kodas: IRF7105TRPBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N, P

Maximum Continuous Drain Current

2.3 A, 3.5 A

Maximum Drain Source Voltage

25 V

Serija

HEXFET

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

160 mΩ, 400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4mm

Transistor Material

Si

Number of Elements per Chip

2

Ilgis

5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V, 9.4 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

Dual N/P-Channel Power MOSFET, Infineon

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 187,80

€ 0,939 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 227,24

€ 1,136 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC IRF7105TRPBF
Pasirinkite pakuotės tipą
sticker-462

€ 187,80

€ 0,939 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 227,24

€ 1,136 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC IRF7105TRPBF

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

kiekisVieneto kainaPer Ritė
200 - 480€ 0,939€ 18,78
500 - 980€ 0,90€ 18,00
1000 - 1980€ 0,84€ 16,80
2000+€ 0,791€ 15,82

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N, P

Maximum Continuous Drain Current

2.3 A, 3.5 A

Maximum Drain Source Voltage

25 V

Serija

HEXFET

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

160 mΩ, 400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4mm

Transistor Material

Si

Number of Elements per Chip

2

Ilgis

5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V, 9.4 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

Dual N/P-Channel Power MOSFET, Infineon

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more