Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N, P
Maximum Continuous Drain Current
2.3 A, 3.5 A
Maximum Drain Source Voltage
25 V
Serija
HEXFET
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
160 mΩ, 400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4mm
Transistor Material
Si
Number of Elements per Chip
2
Ilgis
5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V, 9.4 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.5mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Dual N/P-Channel Power MOSFET, Infineon
Infineons dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 187,80
€ 0,939 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 227,24
€ 1,136 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
200

€ 187,80
€ 0,939 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 227,24
€ 1,136 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Ritė)
200

Sandėlio informacija laikinai nepasiekiama.
kiekis | Vieneto kaina | Per Ritė |
---|---|---|
200 - 480 | € 0,939 | € 18,78 |
500 - 980 | € 0,90 | € 18,00 |
1000 - 1980 | € 0,84 | € 16,80 |
2000+ | € 0,791 | € 15,82 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N, P
Maximum Continuous Drain Current
2.3 A, 3.5 A
Maximum Drain Source Voltage
25 V
Serija
HEXFET
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
160 mΩ, 400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4mm
Transistor Material
Si
Number of Elements per Chip
2
Ilgis
5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V, 9.4 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.5mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Dual N/P-Channel Power MOSFET, Infineon
Infineons dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.