Infineon CoolMOS™ CE N-Channel MOSFET, 14.1 A, 550 V, 3-Pin TO-220 IPP50R380CEXKSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
14.1 A
Maximum Drain Source Voltage
550 V
Serija
CoolMOS™ CE
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
98 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.36mm
Typical Gate Charge @ Vgs
24.8 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
15.95mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.85V
Produkto aprašymas
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 9,65
€ 0,965 Each (In a Pack of 10) (be PVM)
€ 11,68
€ 1,168 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 9,65
€ 0,965 Each (In a Pack of 10) (be PVM)
€ 11,68
€ 1,168 Each (In a Pack of 10) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
10
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 40 | € 0,965 | € 9,65 |
| 50 - 90 | € 0,917 | € 9,17 |
| 100 - 240 | € 0,878 | € 8,78 |
| 250 - 490 | € 0,84 | € 8,40 |
| 500+ | € 0,781 | € 7,81 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
14.1 A
Maximum Drain Source Voltage
550 V
Serija
CoolMOS™ CE
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
98 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.36mm
Typical Gate Charge @ Vgs
24.8 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
15.95mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.85V
Produkto aprašymas
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products