Infineon OptiMOS FD N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
61 A
Maximum Drain Source Voltage
250 V
Serija
OptiMOS FD
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.36mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Plotis
4.57mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
15.95mm
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™ FD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 235,12
€ 4,702 Each (In a Tube of 50) (be PVM)
€ 284,50
€ 5,69 Each (In a Tube of 50) (su PVM)
50
€ 235,12
€ 4,702 Each (In a Tube of 50) (be PVM)
€ 284,50
€ 5,69 Each (In a Tube of 50) (su PVM)
50
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
61 A
Maximum Drain Source Voltage
250 V
Serija
OptiMOS FD
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.36mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Plotis
4.57mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
15.95mm
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™ FD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products