Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 IMW65R048M1HXKSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
650 V
Serija
CoolSiC
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.064 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.7V
Number of Elements per Chip
1
Transistor Material
Silicon
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€ 196,65
€ 6,555 Each (In a Tube of 30) (be PVM)
€ 237,95
€ 7,932 Each (In a Tube of 30) (su PVM)
30
€ 196,65
€ 6,555 Each (In a Tube of 30) (be PVM)
€ 237,95
€ 7,932 Each (In a Tube of 30) (su PVM)
30
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 30 - 30 | € 6,555 | € 196,65 |
| 60 - 60 | € 6,175 | € 185,25 |
| 90+ | € 5,795 | € 173,85 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
650 V
Serija
CoolSiC
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.064 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.7V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products