Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
105 W
Pakuotės tipas
EASY1B
Configuration
Common Collector
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
23
Switching Speed
1MHz
Transistor Configuration
3 Phase
Matmenys
48 x 33.8 x 12mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
€ 41,80
€ 41,80 už 1 vnt. (be PVM)
€ 50,58
€ 50,58 už 1 vnt. (su PVM)
1

€ 41,80
€ 41,80 už 1 vnt. (be PVM)
€ 50,58
€ 50,58 už 1 vnt. (su PVM)
1

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina |
---|---|
1 - 1 | € 41,80 |
2 - 4 | € 39,71 |
5 - 9 | € 38,10 |
10 - 24 | € 36,38 |
25+ | € 33,92 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
105 W
Pakuotės tipas
EASY1B
Configuration
Common Collector
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
23
Switching Speed
1MHz
Transistor Configuration
3 Phase
Matmenys
48 x 33.8 x 12mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.