Techniniai dokumentai
Specifikacijos
Markė
InfineonMemory Size
64kbit
Organisation
8K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
DFN
Kaiščių skaičius
8
Matmenys
4 x 4.5 x 0.7mm
Ilgis
4.5mm
Plotis
4mm
Maximum Operating Supply Voltage
3.65 V
Aukštis
0.7mm
Maksimali darbinė temperatūra
+85 °C
Number of Words
8K
Minimali darbinė temperatūra
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Produkto aprašymas
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 7,30
€ 3,65 Each (In a Pack of 2) (be PVM)
€ 8,83
€ 4,416 Each (In a Pack of 2) (su PVM)
Standartas
2

€ 7,30
€ 3,65 Each (In a Pack of 2) (be PVM)
€ 8,83
€ 4,416 Each (In a Pack of 2) (su PVM)
Standartas
2

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
2 - 8 | € 3,65 | € 7,30 |
10 - 48 | € 3,20 | € 6,40 |
50 - 98 | € 3,10 | € 6,20 |
100 - 498 | € 2,75 | € 5,50 |
500+ | € 2,65 | € 5,30 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonMemory Size
64kbit
Organisation
8K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
DFN
Kaiščių skaičius
8
Matmenys
4 x 4.5 x 0.7mm
Ilgis
4.5mm
Plotis
4mm
Maximum Operating Supply Voltage
3.65 V
Aukštis
0.7mm
Maksimali darbinė temperatūra
+85 °C
Number of Words
8K
Minimali darbinė temperatūra
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Produkto aprašymas
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.