Techniniai dokumentai
Specifikacijos
Markė
InfineonMemory Size
512kbit
Organisation
64K x 8 bit
Interface Type
Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
450ns
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOIC
Kaiščių skaičius
8
Matmenys
4.97 x 3.98 x 1.47mm
Ilgis
4.97mm
Maximum Operating Supply Voltage
3.6 V
Plotis
3.98mm
Aukštis
1.47mm
Maksimali darbinė temperatūra
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Number of Words
64K
Minimali darbinė temperatūra
-40 °C
Minimum Operating Supply Voltage
2 V
Produkto aprašymas
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 12,40
€ 12,40 už 1 vnt. (be PVM)
€ 15,00
€ 15,00 už 1 vnt. (su PVM)
Standartas
1

€ 12,40
€ 12,40 už 1 vnt. (be PVM)
€ 15,00
€ 15,00 už 1 vnt. (su PVM)
Standartas
1

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina |
---|---|
1 - 9 | € 12,40 |
10 - 24 | € 10,10 |
25 - 99 | € 9,90 |
100 - 499 | € 9,60 |
500+ | € 9,40 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonMemory Size
512kbit
Organisation
64K x 8 bit
Interface Type
Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
450ns
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOIC
Kaiščių skaičius
8
Matmenys
4.97 x 3.98 x 1.47mm
Ilgis
4.97mm
Maximum Operating Supply Voltage
3.6 V
Plotis
3.98mm
Aukštis
1.47mm
Maksimali darbinė temperatūra
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Number of Words
64K
Minimali darbinė temperatūra
-40 °C
Minimum Operating Supply Voltage
2 V
Produkto aprašymas
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.