Techniniai dokumentai
Specifikacijos
Markė
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
450ns
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOIC
Kaiščių skaičius
8
Matmenys
4.97 x 3.98 x 1.47mm
Ilgis
4.97mm
Maximum Operating Supply Voltage
3.6 V
Plotis
3.98mm
Aukštis
1.47mm
Maksimali darbinė temperatūra
+85 °C
Number of Bits per Word
8bit
Number of Words
32K
Minimali darbinė temperatūra
-40 °C
Minimum Operating Supply Voltage
2 V
Produkto aprašymas
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 14,20
€ 7,10 Each (In a Pack of 2) (be PVM)
€ 17,18
€ 8,591 Each (In a Pack of 2) (su PVM)
Standartas
2

€ 14,20
€ 7,10 Each (In a Pack of 2) (be PVM)
€ 17,18
€ 8,591 Each (In a Pack of 2) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
2

Sandėlio informacija laikinai nepasiekiama.
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
2 - 8 | € 7,10 | € 14,20 |
10 - 18 | € 5,60 | € 11,20 |
20 - 98 | € 5,50 | € 11,00 |
100 - 498 | € 5,30 | € 10,60 |
500+ | € 5,20 | € 10,40 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
450ns
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOIC
Kaiščių skaičius
8
Matmenys
4.97 x 3.98 x 1.47mm
Ilgis
4.97mm
Maximum Operating Supply Voltage
3.6 V
Plotis
3.98mm
Aukštis
1.47mm
Maksimali darbinė temperatūra
+85 °C
Number of Bits per Word
8bit
Number of Words
32K
Minimali darbinė temperatūra
-40 °C
Minimum Operating Supply Voltage
2 V
Produkto aprašymas
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.