Techniniai dokumentai
Specifikacijos
Markė
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
Parallel
Data Bus Width
8bit
Maximum Random Access Time
70ns
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOIC
Kaiščių skaičius
28
Matmenys
18.11 x 7.62 x 2.37mm
Ilgis
18.11mm
Maximum Operating Supply Voltage
5.5 V
Plotis
7.62mm
Aukštis
2.37mm
Maksimali darbinė temperatūra
+85 °C
Automotive Standard
AEC-Q100
Number of Words
32K
Minimali darbinė temperatūra
-40 °C
Minimum Operating Supply Voltage
4.5 V
Number of Bits per Word
8bit
Produkto aprašymas
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 9,02
€ 9,02 už 1 vnt. (be PVM)
€ 10,92
€ 10,92 už 1 vnt. (su PVM)
Standartas
1

€ 9,02
€ 9,02 už 1 vnt. (be PVM)
€ 10,92
€ 10,92 už 1 vnt. (su PVM)
Standartas
1

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Techniniai dokumentai
Specifikacijos
Markė
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
Parallel
Data Bus Width
8bit
Maximum Random Access Time
70ns
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOIC
Kaiščių skaičius
28
Matmenys
18.11 x 7.62 x 2.37mm
Ilgis
18.11mm
Maximum Operating Supply Voltage
5.5 V
Plotis
7.62mm
Aukštis
2.37mm
Maksimali darbinė temperatūra
+85 °C
Automotive Standard
AEC-Q100
Number of Words
32K
Minimali darbinė temperatūra
-40 °C
Minimum Operating Supply Voltage
4.5 V
Number of Bits per Word
8bit
Produkto aprašymas
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.