Infineon OptiMOS™ N-Channel MOSFET, 1.2 A, 100 V, 3-Pin SOT-223 BSP296NH6327XTSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
100 V
Serija
OptiMOS™
Pakuotės tipas
SOT-223
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.5mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.6mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 322,05
€ 0,322 Each (On a Reel of 1000) (be PVM)
€ 389,68
€ 0,39 Each (On a Reel of 1000) (su PVM)
1000
€ 322,05
€ 0,322 Each (On a Reel of 1000) (be PVM)
€ 389,68
€ 0,39 Each (On a Reel of 1000) (su PVM)
1000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
100 V
Serija
OptiMOS™
Pakuotės tipas
SOT-223
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.5mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.6mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products