Infineon OptiMOS™ N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC011N03LSATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
TDSON
Serija
OptiMOS™
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
1.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
36 nC @ 4.5 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Plotis
5.35mm
Ilgis
6.1mm
Forward Diode Voltage
1V
Aukštis
1.1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 3 809,50
€ 0,762 Each (On a Reel of 5000) (be PVM)
€ 4 609,50
€ 0,922 Each (On a Reel of 5000) (su PVM)
5000
€ 3 809,50
€ 0,762 Each (On a Reel of 5000) (be PVM)
€ 4 609,50
€ 0,922 Each (On a Reel of 5000) (su PVM)
5000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
TDSON
Serija
OptiMOS™
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
1.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
36 nC @ 4.5 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Plotis
5.35mm
Ilgis
6.1mm
Forward Diode Voltage
1V
Aukštis
1.1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products