Dual P-Channel MOSFET Transistor, 5 A, 30 V, 8-Pin SOIC Fairchild FDS4953
Techniniai dokumentai
Specifikacijos
Channel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+175 °C
Ilgis
5mm
Plotis
4mm
Typical Gate Charge @ Vgs
6 nC @ 5 V
Minimali darbinė temperatūra
-55 °C
Aukštis
1.5mm
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P.O.A.
Už kiekviena vnt. (tiekiama riteje) (be PVM)
Gamybinė pakuotė (Ritė)
5
P.O.A.
Už kiekviena vnt. (tiekiama riteje) (be PVM)
Gamybinė pakuotė (Ritė)
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
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Techniniai dokumentai
Specifikacijos
Channel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+175 °C
Ilgis
5mm
Plotis
4mm
Typical Gate Charge @ Vgs
6 nC @ 5 V
Minimali darbinė temperatūra
-55 °C
Aukštis
1.5mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products