Diodes Inc N-Channel MOSFET, 3.9 A, 30 V, 3-Pin SOT-23 ZXMN3A14FTA

RS kodas: 708-2579PGamintojas: DiodesZetexGamintojo kodas: ZXMN3A14FTA
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Ilgis

3.05mm

Maksimali darbinė temperatūra

+150 °C

Plotis

1.4mm

Transistor Material

Si

Typical Gate Charge @ Vgs

8.6 nC @ 10 V

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 3,18

€ 0,318 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 3,85

€ 0,385 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Diodes Inc N-Channel MOSFET, 3.9 A, 30 V, 3-Pin SOT-23 ZXMN3A14FTA
Pasirinkite pakuotės tipą
sticker-462

€ 3,18

€ 0,318 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 3,85

€ 0,385 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Diodes Inc N-Channel MOSFET, 3.9 A, 30 V, 3-Pin SOT-23 ZXMN3A14FTA

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Ilgis

3.05mm

Maksimali darbinė temperatūra

+150 °C

Plotis

1.4mm

Transistor Material

Si

Typical Gate Charge @ Vgs

8.6 nC @ 10 V

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more