Infineon HEXFET N-Channel MOSFET, 20 A, 30 V, 8-Pin SOIC IRF7832TRPBF

RS kodas: 827-3896Gamintojas: InfineonGamintojo kodas: IRF7832TRPBF
brand-logo
Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

30 V

Serija

HEXFET

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.32V

Minimum Gate Threshold Voltage

1.39V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

5mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Maksimali darbinė temperatūra

+155 °C

Plotis

4mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.5mm

Produkto aprašymas

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

€ 6,44

€ 0,644 Each (In a Pack of 10) (be PVM)

€ 7,79

€ 0,779 Each (In a Pack of 10) (su PVM)

Infineon HEXFET N-Channel MOSFET, 20 A, 30 V, 8-Pin SOIC IRF7832TRPBF
Pasirinkite pakuotės tipą

Standartas

Pasirinkite pakuotės tipą

Standartas - each

Galima įsigyti kartotiną kiekį 10.

Gamyba -

Galima įsigyti kartotiną kiekį 10.

Rekomenduojama užsakant dideliais kiekiais. Produktai supakuoti taip, kad juos būtų galima įdėti į mašinas, todėl galite padidinti gamybos efektyvumą.

10

Galima įsigyti kartotiną kiekį 10
10€ 6,44
20€ 12,88
30€ 19,32
40€ 25,76
50€ 32,20
60€ 38,64
70€ 45,08
80€ 51,52
90€ 57,96
100€ 64,40
110€ 70,84
120€ 77,28
130€ 83,72
140€ 90,16
150€ 96,60
sticker-462

€ 6,44

€ 0,644 Each (In a Pack of 10) (be PVM)

€ 7,79

€ 0,779 Each (In a Pack of 10) (su PVM)

Infineon HEXFET N-Channel MOSFET, 20 A, 30 V, 8-Pin SOIC IRF7832TRPBF

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą

Standartas

Pasirinkite pakuotės tipą

Standartas - each

Galima įsigyti kartotiną kiekį 10.

Gamyba -

Galima įsigyti kartotiną kiekį 10.

Rekomenduojama užsakant dideliais kiekiais. Produktai supakuoti taip, kad juos būtų galima įdėti į mašinas, todėl galite padidinti gamybos efektyvumą.

10

Galima įsigyti kartotiną kiekį 10
10€ 6,44
20€ 12,88
30€ 19,32
40€ 25,76
50€ 32,20
60€ 38,64
70€ 45,08
80€ 51,52
90€ 57,96
100€ 64,40
110€ 70,84
120€ 77,28
130€ 83,72
140€ 90,16
150€ 96,60
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

30 V

Serija

HEXFET

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.32V

Minimum Gate Threshold Voltage

1.39V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

5mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Maksimali darbinė temperatūra

+155 °C

Plotis

4mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.5mm

Produkto aprašymas

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more