Diodes Inc Quad N/P-Channel-Channel MOSFET, 1.8 A, 3.1 A, 30 V, 8-Pin SM ZXMHC3A01T8TA
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
1.8 A, 3.1 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SM
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
180 mΩ, 330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Full Bridge
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
3.7mm
Transistor Material
Si
Number of Elements per Chip
4
Ilgis
6.7mm
Typical Gate Charge @ Vgs
3.9 nC @ 10 V, 5.2 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.6mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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€ 29,25
€ 1,95 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 35,39
€ 2,36 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
15
€ 29,25
€ 1,95 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 35,39
€ 2,36 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Ritė)
15
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 15 - 45 | € 1,95 | € 9,75 |
| 50 - 245 | € 1,75 | € 8,75 |
| 250 - 495 | € 1,50 | € 7,50 |
| 500+ | € 1,30 | € 6,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
1.8 A, 3.1 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SM
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
180 mΩ, 330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Full Bridge
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
3.7mm
Transistor Material
Si
Number of Elements per Chip
4
Ilgis
6.7mm
Typical Gate Charge @ Vgs
3.9 nC @ 10 V, 5.2 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.6mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products