Texas Instruments NexFET N-Channel MOSFET, 134 A, 60 V, 8-Pin VSONP CSD18531Q5A
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
134 A
Maximum Drain Source Voltage
60 V
Serija
NexFET
Pakuotės tipas
VSONP
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
5.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
5.8mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 7,36
€ 1,472 Each (In a Pack of 5) (be PVM)
€ 8,91
€ 1,781 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 7,36
€ 1,472 Each (In a Pack of 5) (be PVM)
€ 8,91
€ 1,781 Each (In a Pack of 5) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 20 | € 1,472 | € 7,36 |
| 25 - 45 | € 1,378 | € 6,89 |
| 50 - 120 | € 1,235 | € 6,18 |
| 125 - 245 | € 1,14 | € 5,70 |
| 250+ | € 1,092 | € 5,46 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
134 A
Maximum Drain Source Voltage
60 V
Serija
NexFET
Pakuotės tipas
VSONP
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
5.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
5.8mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products