STMicroelectronics MDmesh M2 N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
52 A
Maximum Drain Source Voltage
650 V
Serija
MDmesh M2
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
350 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Ilgis
15.75mm
Typical Gate Charge @ Vgs
91 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Plotis
5.15mm
Forward Diode Voltage
1.6V
Aukštis
20.15mm
Kilmės šalis
China
Produkto aprašymas
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
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€ 7,98
€ 7,98 už 1 vnt. (be PVM)
€ 9,66
€ 9,66 už 1 vnt. (su PVM)
Standartas
1
€ 7,98
€ 7,98 už 1 vnt. (be PVM)
€ 9,66
€ 9,66 už 1 vnt. (su PVM)
Standartas
1
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
52 A
Maximum Drain Source Voltage
650 V
Serija
MDmesh M2
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
350 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Ilgis
15.75mm
Typical Gate Charge @ Vgs
91 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Plotis
5.15mm
Forward Diode Voltage
1.6V
Aukštis
20.15mm
Kilmės šalis
China
Produkto aprašymas
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products