STMicroelectronics STripFET F3 N-Channel MOSFET, 80 A, 55 V, 3-Pin DPAK STD65N55F3
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Serija
STripFET F3
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
6.2mm
Ilgis
6.6mm
Typical Gate Charge @ Vgs
33.5 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Aukštis
2.4mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 3 443,75
€ 1,378 Each (On a Reel of 2500) (be PVM)
€ 4 166,94
€ 1,667 Each (On a Reel of 2500) (su PVM)
2500
€ 3 443,75
€ 1,378 Each (On a Reel of 2500) (be PVM)
€ 4 166,94
€ 1,667 Each (On a Reel of 2500) (su PVM)
2500
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Serija
STripFET F3
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
6.2mm
Ilgis
6.6mm
Typical Gate Charge @ Vgs
33.5 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Aukštis
2.4mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products