onsemi Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 NTJD4152PT1G
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
2
Ilgis
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Plotis
1.35mm
Transistor Material
Si
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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€ 26,88
€ 0,269 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 32,53
€ 0,325 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
100
€ 26,88
€ 0,269 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 32,53
€ 0,325 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
100
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 100 - 225 | € 0,269 | € 6,72 |
| 250 - 475 | € 0,234 | € 5,84 |
| 500 - 975 | € 0,206 | € 5,15 |
| 1000+ | € 0,187 | € 4,68 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
2
Ilgis
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Plotis
1.35mm
Transistor Material
Si
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products