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Vishay N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP IRFD210PBF

RS kodas: 178-0916Gamintojas: VishayGamintojo kodas: IRFD210PBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

200 V

Pakuotės tipas

HVMDIP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

6.29mm

Ilgis

5mm

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

3.37mm

Produkto aprašymas

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

€ 59,94

€ 0,599 Each (In a Tube of 100) (be PVM)

€ 72,53

€ 0,725 Each (In a Tube of 100) (su PVM)

Vishay N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP IRFD210PBF
sticker-462

€ 59,94

€ 0,599 Each (In a Tube of 100) (be PVM)

€ 72,53

€ 0,725 Each (In a Tube of 100) (su PVM)

Vishay N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP IRFD210PBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

200 V

Pakuotės tipas

HVMDIP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

6.29mm

Ilgis

5mm

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

3.37mm

Produkto aprašymas

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more