STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8 A, 900 V, 3-Pin TO-220 STP9NK90Z

RS kodas: 761-0213Gamintojas: STMicroelectronicsGamintojo kodas: STP9NK90Z
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

900 V

Pakuotės tipas

TO-220

Serija

MDmesh, SuperMESH

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maksimali darbinė temperatūra

+150 °C

Typical Gate Charge @ Vgs

72 nC @ 10 V

Plotis

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.4mm

Aukštis

15.75mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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€ 3,23

€ 3,23 už 1 vnt. (be PVM)

€ 3,91

€ 3,91 už 1 vnt. (su PVM)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8 A, 900 V, 3-Pin TO-220 STP9NK90Z
Pasirinkite pakuotės tipą
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€ 3,23

€ 3,23 už 1 vnt. (be PVM)

€ 3,91

€ 3,91 už 1 vnt. (su PVM)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8 A, 900 V, 3-Pin TO-220 STP9NK90Z
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
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kiekisVieneto kaina
1 - 9€ 3,23
10 - 24€ 2,94
25 - 99€ 2,76
100 - 499€ 2,18
500+€ 1,95

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

900 V

Pakuotės tipas

TO-220

Serija

MDmesh, SuperMESH

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maksimali darbinė temperatūra

+150 °C

Typical Gate Charge @ Vgs

72 nC @ 10 V

Plotis

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.4mm

Aukštis

15.75mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more