STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 40 A, 600 V, 4-Pin ISOTOP STE40NC60
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Serija
MDmesh, SuperMESH
Pakuotės tipas
ISOTOP
Tvirtinimo tipas
Screw Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
38.2mm
Typical Gate Charge @ Vgs
307.5 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
9.1mm
Minimali darbinė temperatūra
-65 °C
Produkto aprašymas
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 359,10
€ 35,91 Each (In a Tube of 10) (be PVM)
€ 434,51
€ 43,451 Each (In a Tube of 10) (su PVM)
10
€ 359,10
€ 35,91 Each (In a Tube of 10) (be PVM)
€ 434,51
€ 43,451 Each (In a Tube of 10) (su PVM)
10
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 10 - 40 | € 35,91 | € 359,10 |
| 50 - 90 | € 34,295 | € 342,95 |
| 100 - 190 | € 30,305 | € 303,05 |
| 200 - 490 | € 28,215 | € 282,15 |
| 500+ | € 26,22 | € 262,20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Serija
MDmesh, SuperMESH
Pakuotės tipas
ISOTOP
Tvirtinimo tipas
Screw Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
38.2mm
Typical Gate Charge @ Vgs
307.5 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
9.1mm
Minimali darbinė temperatūra
-65 °C
Produkto aprašymas
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products