STMicroelectronics N-Channel MOSFET, 17 A, 650 V, 3-Pin D2PAK STB24NM60N
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
D2PAK (TO-263)
Serija
MDmesh
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Ilgis
10.75mm
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
46 nC @ 10 V
Plotis
10.4mm
Minimali darbinė temperatūra
-55 °C
Aukštis
4.6mm
Produkto aprašymas
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 20,42
€ 2,04 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 24,71
€ 2,47 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
10
€ 20,42
€ 2,04 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 24,71
€ 2,47 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
10
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina |
|---|---|
| 10 - 99 | € 2,04 |
| 100 - 499 | € 1,62 |
| 500 - 999 | € 1,42 |
| 1000+ | € 1,24 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
D2PAK (TO-263)
Serija
MDmesh
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Ilgis
10.75mm
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
46 nC @ 10 V
Plotis
10.4mm
Minimali darbinė temperatūra
-55 °C
Aukštis
4.6mm
Produkto aprašymas
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products