IXYS HiperFET, Polar N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227 IXFN102N30P
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
300 V
Pakuotės tipas
SOT-227
Serija
HiperFET, Polar
Tvirtinimo tipas
Screw Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
570 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
38.23mm
Maksimali darbinė temperatūra
+150 °C
Plotis
25.42mm
Typical Gate Charge @ Vgs
224 nC @ 10 V
Aukštis
9.6mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 28,22
€ 28,22 už 1 vnt. (be PVM)
€ 34,15
€ 34,15 už 1 vnt. (su PVM)
Standartas
1
€ 28,22
€ 28,22 už 1 vnt. (be PVM)
€ 34,15
€ 34,15 už 1 vnt. (su PVM)
Standartas
1
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina |
|---|---|
| 1 - 1 | € 28,22 |
| 2 - 4 | € 26,79 |
| 5+ | € 25,36 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
300 V
Pakuotės tipas
SOT-227
Serija
HiperFET, Polar
Tvirtinimo tipas
Screw Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
570 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
38.23mm
Maksimali darbinė temperatūra
+150 °C
Plotis
25.42mm
Typical Gate Charge @ Vgs
224 nC @ 10 V
Aukštis
9.6mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products