Infineon P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 SI4435DYTRPBF

RS kodas: 171-1913PGamintojas: InfineonGamintojo kodas: SI4435DYTRPBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

30 V

Serija

Si4435DYPbF

Pakuotės tipas

SO-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

4mm

Number of Elements per Chip

1

Ilgis

5mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Typical Power Gain

0

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Sandėlio informacija laikinai nepasiekiama.

€ 2,52

€ 0,252 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 3,05

€ 0,305 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Infineon P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 SI4435DYTRPBF
Pasirinkite pakuotės tipą
sticker-462

€ 2,52

€ 0,252 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 3,05

€ 0,305 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Infineon P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 SI4435DYTRPBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

30 V

Serija

Si4435DYPbF

Pakuotės tipas

SO-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

4mm

Number of Elements per Chip

1

Ilgis

5mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Typical Power Gain

0

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more