Infineon HEXFET N-Channel MOSFET, 1.2 A, 20 V, 3-Pin SOT-23 IRLML2402TRPBF
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
20 V
Serija
HEXFET
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.7V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
540 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
2.6 nC @ 4.5 V
Plotis
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3.04mm
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.02mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 0,93
€ 0,186 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 1,13
€ 0,225 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
5
€ 0,93
€ 0,186 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 1,13
€ 0,225 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
20 V
Serija
HEXFET
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.7V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
540 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
2.6 nC @ 4.5 V
Plotis
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3.04mm
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.02mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products