Diodes Inc N-Channel MOSFET, 11 A, 12 V, 3-Pin SOT-346 DMN1019USN-7

RS kodas: 165-8326Gamintojas: DiodesZetexGamintojo kodas: DMN1019USN-7
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

SOT-346

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

1.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Plotis

1.7mm

Ilgis

3.1mm

Typical Gate Charge @ Vgs

50.6 nC @ 8 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1.3mm

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Sandėlio informacija laikinai nepasiekiama.

€ 361,95

€ 0,121 Each (On a Reel of 3000) (be PVM)

€ 437,96

€ 0,146 Each (On a Reel of 3000) (su PVM)

Diodes Inc N-Channel MOSFET, 11 A, 12 V, 3-Pin SOT-346 DMN1019USN-7
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€ 361,95

€ 0,121 Each (On a Reel of 3000) (be PVM)

€ 437,96

€ 0,146 Each (On a Reel of 3000) (su PVM)

Diodes Inc N-Channel MOSFET, 11 A, 12 V, 3-Pin SOT-346 DMN1019USN-7
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

SOT-346

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

1.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Plotis

1.7mm

Ilgis

3.1mm

Typical Gate Charge @ Vgs

50.6 nC @ 8 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1.3mm

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more