Infineon 64kbit SPI FRAM Memory 8-Pin TDFN, FM25CL64B-DG
Techniniai dokumentai
Specifikacijos
Memory Size
64kbit
Organisation
8192 x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
TDFN
Kaiščių skaičius
8
Matmenys
4.5 x 4 x 0.75mm
Ilgis
4.5mm
Maximum Operating Supply Voltage
3.65 V
Plotis
4mm
Aukštis
0.75mm
Maksimali darbinė temperatūra
+85 °C
Number of Words
8192
Minimali darbinė temperatūra
-40 °C
Number of Bits per Word
8bit
Minimum Operating Supply Voltage
2.7 V
Produkto aprašymas
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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P.O.A.
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P.O.A.
Sandėlio informacija laikinai nepasiekiama.
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Sandėlio informacija laikinai nepasiekiama.
Ideate. Create. Collaborate
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Techniniai dokumentai
Specifikacijos
Memory Size
64kbit
Organisation
8192 x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
TDFN
Kaiščių skaičius
8
Matmenys
4.5 x 4 x 0.75mm
Ilgis
4.5mm
Maximum Operating Supply Voltage
3.65 V
Plotis
4mm
Aukštis
0.75mm
Maksimali darbinė temperatūra
+85 °C
Number of Words
8192
Minimali darbinė temperatūra
-40 °C
Number of Bits per Word
8bit
Minimum Operating Supply Voltage
2.7 V
Produkto aprašymas
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products