Vishay SQ Rugged P-Channel MOSFET, 7.4 A, 40 V, 6-Pin TSOP-6 SQ3419EV-T1_GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
7.4 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
TSOP-6
Serija
SQ Rugged
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
10 nC @ 4.5 V
Maksimali darbinė temperatūra
+175 °C
Ilgis
3.1mm
Plotis
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 19,70
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 23,84
Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
100
€ 19,70
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 23,84
Už kiekviena vnt. (tiekiama riteje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Ritė)
100
Sandėlio informacija laikinai nepasiekiama.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
7.4 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
TSOP-6
Serija
SQ Rugged
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
10 nC @ 4.5 V
Maksimali darbinė temperatūra
+175 °C
Ilgis
3.1mm
Plotis
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products