Vishay P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP IRFD9014PBF
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
HVMDIP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
4
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
6.29mm
Ilgis
5mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
3.37mm
Produkto aprašymas
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 60,61
€ 0,606 Each (In a Tube of 100) (be PVM)
€ 73,34
€ 0,733 Each (In a Tube of 100) (su PVM)
100
€ 60,61
€ 0,606 Each (In a Tube of 100) (be PVM)
€ 73,34
€ 0,733 Each (In a Tube of 100) (su PVM)
100
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 100 - 100 | € 0,606 | € 60,61 |
| 200 - 400 | € 0,57 | € 57,00 |
| 500+ | € 0,515 | € 51,49 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
HVMDIP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
4
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
6.29mm
Ilgis
5mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
3.37mm
Produkto aprašymas
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products