STMicroelectronics N-Channel MOSFET, 2.5 A, 800 V, 8-Pin PowerFLAT 5 x 6 STL4N80K5
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
800 V
Serija
MDmesh K5, SuperMESH5
Pakuotės tipas
PowerFLAT 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Plotis
5.4mm
Number of Elements per Chip
1
Ilgis
6.35mm
Typical Gate Charge @ Vgs
10.5 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
0.95mm
Produkto aprašymas
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 9,26
€ 1,852 Už kiekviena vnt. (tiekiama juostoje) (be PVM)
€ 11,21
€ 2,241 Už kiekviena vnt. (tiekiama juostoje) (su PVM)
Standartas
5
€ 9,26
€ 1,852 Už kiekviena vnt. (tiekiama juostoje) (be PVM)
€ 11,21
€ 2,241 Už kiekviena vnt. (tiekiama juostoje) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Juosta |
|---|---|---|
| 5 - 20 | € 1,852 | € 9,26 |
| 25 - 45 | € 1,758 | € 8,79 |
| 50 - 120 | € 1,568 | € 7,84 |
| 125 - 245 | € 1,425 | € 7,12 |
| 250+ | € 1,33 | € 6,65 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
800 V
Serija
MDmesh K5, SuperMESH5
Pakuotės tipas
PowerFLAT 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Plotis
5.4mm
Number of Elements per Chip
1
Ilgis
6.35mm
Typical Gate Charge @ Vgs
10.5 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
0.95mm
Produkto aprašymas
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products