STMicroelectronics STGD5H60DF IGBT, 10 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
83 W
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
6.6 x 6.2 x 2.4mm
Minimali darbinė temperatūra
-55 °C
Gate Capacitance
855pF
Maksimali darbinė temperatūra
+175 °C
Energy Rating
221mJ
Kilmės šalis
China
Produkto aprašymas
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 40,00
€ 0,80 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 48,40
€ 0,968 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
50
€ 40,00
€ 0,80 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 48,40
€ 0,968 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Ritė)
50
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 50 - 90 | € 0,80 | € 8,00 |
| 100 - 240 | € 0,72 | € 7,20 |
| 250 - 490 | € 0,649 | € 6,49 |
| 500+ | € 0,617 | € 6,17 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
83 W
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
6.6 x 6.2 x 2.4mm
Minimali darbinė temperatūra
-55 °C
Gate Capacitance
855pF
Maksimali darbinė temperatūra
+175 °C
Energy Rating
221mJ
Kilmės šalis
China
Produkto aprašymas
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products