SMT N channel MOSFET,IRLML2803 0.91A 30V
Techniniai dokumentai
Specifikacijos
Channel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
540 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Serija
HEXFET
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.04mm
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Aukštis
1.02mm
Plotis
1.4mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
P.O.A.
1
P.O.A.
1
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Channel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
540 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Serija
HEXFET
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.04mm
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Aukštis
1.02mm
Plotis
1.4mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products