Wolfspeed SiC N-Channel MOSFET, 90 A, 1200 V, 3-Pin TO-247 C2M0025120D
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
463 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Plotis
21.1mm
Transistor Material
SiC
Number of Elements per Chip
1
Ilgis
16.13mm
Typical Gate Charge @ Vgs
161 nC @ 20 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
5.21mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
3.3V
Kilmės šalis
China
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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€ 98,80
€ 98,80 už 1 vnt. (be PVM)
€ 119,55
€ 119,55 už 1 vnt. (su PVM)
Standartas
1
€ 98,80
€ 98,80 už 1 vnt. (be PVM)
€ 119,55
€ 119,55 už 1 vnt. (su PVM)
Standartas
1
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
463 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Plotis
21.1mm
Transistor Material
SiC
Number of Elements per Chip
1
Ilgis
16.13mm
Typical Gate Charge @ Vgs
161 nC @ 20 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
5.21mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
3.3V
Kilmės šalis
China
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products