Techniniai dokumentai
Specifikacijos
Markė
VishayTvirtinimo tipas
Panel Mount
Pakuotės tipas
SOT-227
Maximum Continuous Forward Current
120A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Isolated
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Kaiščių skaičius
4
Maximum Forward Voltage Drop
5.3V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
218ns
Peak Non-Repetitive Forward Surge Current
350A
Kilmės šalis
Philippines
Produkto aprašymas
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 517,75
€ 51,775 Each (In a Box of 10) (be PVM)
€ 626,48
€ 62,648 Each (In a Box of 10) (su PVM)
10

€ 517,75
€ 51,775 Each (In a Box of 10) (be PVM)
€ 626,48
€ 62,648 Each (In a Box of 10) (su PVM)
10

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Dėžutė |
---|---|---|
10 - 10 | € 51,775 | € 517,75 |
20+ | € 48,925 | € 489,25 |
Techniniai dokumentai
Specifikacijos
Markė
VishayTvirtinimo tipas
Panel Mount
Pakuotės tipas
SOT-227
Maximum Continuous Forward Current
120A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Isolated
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Kaiščių skaičius
4
Maximum Forward Voltage Drop
5.3V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
218ns
Peak Non-Repetitive Forward Surge Current
350A
Kilmės šalis
Philippines
Produkto aprašymas
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.