Vishay TrenchFET P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
30 V
Serija
TrenchFET
Pakuotės tipas
PowerPAK 1212-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
3.3mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3.3mm
Typical Gate Charge @ Vgs
92 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
0.78mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 112,86
€ 0,564 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 136,56
€ 0,683 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
200
€ 112,86
€ 0,564 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 136,56
€ 0,683 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
200
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 200 - 480 | € 0,564 | € 11,29 |
| 500 - 980 | € 0,50 | € 9,99 |
| 1000 - 1980 | € 0,428 | € 8,57 |
| 2000+ | € 0,357 | € 7,14 |
Ideate. Create. Collaborate
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Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
30 V
Serija
TrenchFET
Pakuotės tipas
PowerPAK 1212-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
3.3mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3.3mm
Typical Gate Charge @ Vgs
92 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
0.78mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products