Dual N/P-Channel MOSFET, 3 A, 3.7 A, 30 V, 8-Pin SOIC Vishay SI4532ADY-T1-E3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N, P
Maximum Continuous Drain Current
3 A, 3.7 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
53 mΩ, 80 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.13 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4mm
Transistor Material
Si
Typical Gate Charge @ Vgs
10 nC @ 10 V, 8 nC @ 10 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
5mm
Minimali darbinė temperatūra
-55 °C
Aukštis
1.55mm
Produkto aprašymas
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 6,72
€ 0,672 Each (In a Pack of 10) (be PVM)
€ 8,13
€ 0,813 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 6,72
€ 0,672 Each (In a Pack of 10) (be PVM)
€ 8,13
€ 0,813 Each (In a Pack of 10) (su PVM)
Standartas
10
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 40 | € 0,672 | € 6,72 |
| 50 - 90 | € 0,659 | € 6,59 |
| 100 - 240 | € 0,515 | € 5,15 |
| 250 - 490 | € 0,50 | € 5,00 |
| 500+ | € 0,426 | € 4,26 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N, P
Maximum Continuous Drain Current
3 A, 3.7 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
53 mΩ, 80 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.13 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4mm
Transistor Material
Si
Typical Gate Charge @ Vgs
10 nC @ 10 V, 8 nC @ 10 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
5mm
Minimali darbinė temperatūra
-55 °C
Aukštis
1.55mm
Produkto aprašymas
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products