Vishay N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB IRF820PBF

RS kodas: 543-0002Gamintojas: VishayGamintojo kodas: IRF820PBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

500 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

24 nC @ 10 V

Plotis

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.41mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

9.01mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRF820 2.5A 500V
P.O.A.už 1 vnt. (be PVM)
Sandėlio informacija laikinai nepasiekiama.

€ 1,00

€ 1,00 už 1 vnt. (be PVM)

€ 1,21

€ 1,21 už 1 vnt. (su PVM)

Vishay N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB IRF820PBF
Pasirinkite pakuotės tipą
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€ 1,00

€ 1,00 už 1 vnt. (be PVM)

€ 1,21

€ 1,21 už 1 vnt. (su PVM)

Vishay N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB IRF820PBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kaina
1 - 9€ 1,00
10 - 49€ 0,90
50 - 99€ 0,79
100 - 249€ 0,75
250+€ 0,69

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-channel MOSFET,IRF820 2.5A 500V
P.O.A.už 1 vnt. (be PVM)

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

500 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

24 nC @ 10 V

Plotis

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.41mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

9.01mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-channel MOSFET,IRF820 2.5A 500V
P.O.A.už 1 vnt. (be PVM)