Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL

RS kodas: 171-2383Gamintojas: ToshibaGamintojo kodas: TPHR8504PL
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

340 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

SOP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

1.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

5mm

Ilgis

5mm

Typical Gate Charge @ Vgs

103 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Forward Diode Voltage

1.2V

Aukštis

0.95mm

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Sandėlio informacija laikinai nepasiekiama.

€ 13,30

€ 2,66 Each (In a Pack of 5) (be PVM)

€ 16,09

€ 3,219 Each (In a Pack of 5) (su PVM)

Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL
Pasirinkite pakuotės tipą
sticker-462

€ 13,30

€ 2,66 Each (In a Pack of 5) (be PVM)

€ 16,09

€ 3,219 Each (In a Pack of 5) (su PVM)

Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Pakuotė
5 - 45€ 2,66€ 13,30
50 - 95€ 2,28€ 11,40
100 - 995€ 1,995€ 9,98
1000+€ 1,758€ 8,79

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

340 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

SOP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

1.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

5mm

Ilgis

5mm

Typical Gate Charge @ Vgs

103 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Forward Diode Voltage

1.2V

Aukštis

0.95mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more