Texas Instruments NexFET N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 CSD19534KCS
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Serija
NexFET
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Maksimali darbinė temperatūra
+175 °C
Plotis
4.7mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.1V
Aukštis
16.51mm
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 7,36
€ 1,472 Each (In a Pack of 5) (be PVM)
€ 8,91
€ 1,781 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 7,36
€ 1,472 Each (In a Pack of 5) (be PVM)
€ 8,91
€ 1,781 Each (In a Pack of 5) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 20 | € 1,472 | € 7,36 |
| 25 - 45 | € 1,14 | € 5,70 |
| 50+ | € 1,092 | € 5,46 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Serija
NexFET
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Maksimali darbinė temperatūra
+175 °C
Plotis
4.7mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.1V
Aukštis
16.51mm
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products