Texas Instruments NexFET N-Channel MOSFET, 100 A, 60 V, 8-Pin VSONP CSD18563Q5A

RS kodas: 827-4909PGamintojas: Texas InstrumentsGamintojo kodas: CSD18563Q5A
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

VSONP

Serija

NexFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

10.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Plotis

5mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

5.8mm

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Sandėlio informacija laikinai nepasiekiama.

€ 27,31

€ 1,092 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 33,05

€ 1,321 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Texas Instruments NexFET N-Channel MOSFET, 100 A, 60 V, 8-Pin VSONP CSD18563Q5A
Pasirinkite pakuotės tipą
sticker-462

€ 27,31

€ 1,092 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 33,05

€ 1,321 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Texas Instruments NexFET N-Channel MOSFET, 100 A, 60 V, 8-Pin VSONP CSD18563Q5A
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Ritė
25 - 95€ 1,092€ 5,46
100 - 245€ 0,944€ 4,72
250 - 495€ 0,884€ 4,42
500+€ 0,836€ 4,18

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

VSONP

Serija

NexFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

10.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Plotis

5mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

5.8mm

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more