Texas Instruments NexFET N-Channel MOSFET, 100 A, 60 V, 8-Pin VSONP CSD18563Q5A
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
VSONP
Serija
NexFET
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
10.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Plotis
5mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
5.8mm
Aukštis
1.1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 27,31
€ 1,092 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 33,05
€ 1,321 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
25
€ 27,31
€ 1,092 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 33,05
€ 1,321 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
25
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 25 - 95 | € 1,092 | € 5,46 |
| 100 - 245 | € 0,944 | € 4,72 |
| 250 - 495 | € 0,884 | € 4,42 |
| 500+ | € 0,836 | € 4,18 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
VSONP
Serija
NexFET
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
10.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Plotis
5mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
5.8mm
Aukštis
1.1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products