Texas Instruments NexFET N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP CSD18504Q5A

RS kodas: 827-4883PGamintojas: Texas InstrumentsGamintojo kodas: CSD18504Q5A
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Serija

NexFET

Pakuotės tipas

VSONP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

5.8mm

Typical Gate Charge @ Vgs

7.7 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Sandėlio informacija laikinai nepasiekiama.

€ 2,43

€ 0,486 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 2,94

€ 0,588 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Texas Instruments NexFET N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP CSD18504Q5A
Pasirinkite pakuotės tipą
sticker-462

€ 2,43

€ 0,486 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 2,94

€ 0,588 Už kiekviena vnt. (tiekiama riteje) (su PVM)

Texas Instruments NexFET N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP CSD18504Q5A
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Serija

NexFET

Pakuotės tipas

VSONP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

5.8mm

Typical Gate Charge @ Vgs

7.7 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more