Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
200
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
2.5 V
Maximum Collector Cut-off Current
0.05mA
Maksimali darbinė temperatūra
+150 °C
Matmenys
10.4 x 4.6 x 9.15mm
Plotis
4.6mm
Aukštis
9.15mm
Minimali darbinė temperatūra
-65 °C
Ilgis
10.4mm
Produkto aprašymas
NPN Darlington Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
€ 36,90
€ 0,738 Each (In a Tube of 50) (be PVM)
€ 44,65
€ 0,893 Each (In a Tube of 50) (su PVM)
50

€ 36,90
€ 0,738 Each (In a Tube of 50) (be PVM)
€ 44,65
€ 0,893 Each (In a Tube of 50) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
50

Sandėlio informacija laikinai nepasiekiama.
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
200
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
2.5 V
Maximum Collector Cut-off Current
0.05mA
Maksimali darbinė temperatūra
+150 °C
Matmenys
10.4 x 4.6 x 9.15mm
Plotis
4.6mm
Aukštis
9.15mm
Minimali darbinė temperatūra
-65 °C
Ilgis
10.4mm
Produkto aprašymas
NPN Darlington Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.