STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220 STP310N10F7
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Serija
STripFET H7
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
315 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.4mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Plotis
4.6mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
15.75mm
Produkto aprašymas
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 11,21
€ 5,605 Each (In a Pack of 2) (be PVM)
€ 13,56
€ 6,782 Each (In a Pack of 2) (su PVM)
Standartas
2
€ 11,21
€ 5,605 Each (In a Pack of 2) (be PVM)
€ 13,56
€ 6,782 Each (In a Pack of 2) (su PVM)
Standartas
2
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 2 - 8 | € 5,605 | € 11,21 |
| 10 - 98 | € 4,75 | € 9,50 |
| 100 - 498 | € 3,80 | € 7,60 |
| 500+ | € 3,372 | € 6,74 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Serija
STripFET H7
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
315 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.4mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Plotis
4.6mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
15.75mm
Produkto aprašymas
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products