STMicroelectronics STripFET N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220 STP20NF20

RS kodas: 168-7497Gamintojas: STMicroelectronicsGamintojo kodas: STP20NF20
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Serija

STripFET

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

4.6mm

Ilgis

10.4mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

15.75mm

Produkto aprašymas

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Sandėlio informacija laikinai nepasiekiama.

€ 83,12

€ 1,662 Each (In a Tube of 50) (be PVM)

€ 100,58

€ 2,011 Each (In a Tube of 50) (su PVM)

STMicroelectronics STripFET N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220 STP20NF20
sticker-462

€ 83,12

€ 1,662 Each (In a Tube of 50) (be PVM)

€ 100,58

€ 2,011 Each (In a Tube of 50) (su PVM)

STMicroelectronics STripFET N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220 STP20NF20
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Vamzdelis
50 - 50€ 1,662€ 83,12
100 - 200€ 1,282€ 64,12
250+€ 1,14€ 57,00

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Serija

STripFET

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

4.6mm

Ilgis

10.4mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

15.75mm

Produkto aprašymas

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more