STMicroelectronics N-Channel MOSFET, 60 A, 100 V, 8-Pin PowerFLAT 5 x 6 STL60N10F7
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
100 V
Serija
STripFET H7
Pakuotės tipas
PowerFLAT 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
5.4mm
Plotis
6.35mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
0.95mm
Produkto aprašymas
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 29,69
€ 1,188 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 35,92
€ 1,437 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
25
€ 29,69
€ 1,188 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 35,92
€ 1,437 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
25
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 25 - 45 | € 1,188 | € 5,94 |
| 50 - 120 | € 1,092 | € 5,46 |
| 125 - 245 | € 0,998 | € 4,99 |
| 250+ | € 0,926 | € 4,63 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
100 V
Serija
STripFET H7
Pakuotės tipas
PowerFLAT 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
5.4mm
Plotis
6.35mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
0.95mm
Produkto aprašymas
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products