STMicroelectronics STripFET II N-Channel MOSFET, 25 A, 100 V, 3-Pin DPAK STD25NF10LT4
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
DPAK (TO-252)
Serija
STripFET II
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.6mm
Maksimali darbinė temperatūra
+175 °C
Plotis
6.2mm
Typical Gate Charge @ Vgs
38 nC @ 5 V
Aukštis
2.4mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 10,45
€ 2,09 Each (In a Pack of 5) (be PVM)
€ 12,64
€ 2,529 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 10,45
€ 2,09 Each (In a Pack of 5) (be PVM)
€ 12,64
€ 2,529 Each (In a Pack of 5) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 5 | € 2,09 | € 10,45 |
| 10 - 20 | € 1,758 | € 8,79 |
| 25 - 95 | € 1,71 | € 8,55 |
| 100 - 495 | € 1,378 | € 6,89 |
| 500+ | € 1,235 | € 6,18 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
DPAK (TO-252)
Serija
STripFET II
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.6mm
Maksimali darbinė temperatūra
+175 °C
Plotis
6.2mm
Typical Gate Charge @ Vgs
38 nC @ 5 V
Aukštis
2.4mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products