STMicroelectronics MDmesh M5 N-Channel MOSFET, 35 A, 710 V, 3-Pin D2PAK STB45N65M5
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
710 V
Serija
MDmesh M5
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Plotis
9.35mm
Ilgis
10.4mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Aukštis
4.6mm
Kilmės šalis
China
Produkto aprašymas
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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€ 5 130,00
€ 5,13 Each (On a Reel of 1000) (be PVM)
€ 6 207,30
€ 6,207 Each (On a Reel of 1000) (su PVM)
1000
€ 5 130,00
€ 5,13 Each (On a Reel of 1000) (be PVM)
€ 6 207,30
€ 6,207 Each (On a Reel of 1000) (su PVM)
1000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
710 V
Serija
MDmesh M5
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Plotis
9.35mm
Ilgis
10.4mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Aukštis
4.6mm
Kilmės šalis
China
Produkto aprašymas
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products