onsemi N-Channel MOSFET, 36 A, 60 V, 4-Pin LFPAK, SOT-669 NTMYS014N06CLTWG

RS kodas: 195-2528Gamintojas: onsemiGamintojo kodas: NTMYS014N06CLTWG
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

LFPAK, SOT-669

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

21.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

4.25mm

Ilgis

5mm

Typical Gate Charge @ Vgs

9.7 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1.15mm

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Sandėlio informacija laikinai nepasiekiama.

€ 2 433,90

€ 0,811 Each (On a Reel of 3000) (be PVM)

€ 2 945,02

€ 0,981 Each (On a Reel of 3000) (su PVM)

onsemi N-Channel MOSFET, 36 A, 60 V, 4-Pin LFPAK, SOT-669 NTMYS014N06CLTWG
sticker-462

€ 2 433,90

€ 0,811 Each (On a Reel of 3000) (be PVM)

€ 2 945,02

€ 0,981 Each (On a Reel of 3000) (su PVM)

onsemi N-Channel MOSFET, 36 A, 60 V, 4-Pin LFPAK, SOT-669 NTMYS014N06CLTWG
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

LFPAK, SOT-669

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

21.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

4.25mm

Ilgis

5mm

Typical Gate Charge @ Vgs

9.7 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1.15mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more