onsemi N-Channel MOSFET, 50 A, 60 V, 5-Pin DFN NTMFS5C673NLT1G
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
DFN
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
5
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
5.1mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
1.05mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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€ 121,98
€ 0,61 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 147,60
€ 0,738 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
200
€ 121,98
€ 0,61 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 147,60
€ 0,738 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
200
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 200 - 480 | € 0,61 | € 12,20 |
| 500+ | € 0,53 | € 10,60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
DFN
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
5
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
5.1mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
1.05mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products